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NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier
Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain-Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter-Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5C/W Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCE(sus) ICEO ICBO Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE VCE = 2V, IC = 0.1A VCE = 2V, IC = 2A VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.1A DC Current Gain Linearity hFE VCE from 2V to 20V, IC from 0.1A to 3A NPN to PNP Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product ft VCE = 10V, IC = 500mA, ftest = 10MHz, Note 3 30 - - MHz VCE(sat) VBE(on) IC = 1A, IB = 0.1A VCE = 2V, IC = 1A 40 40 40 20 - - - - - - - - 2 3 - - - - - - - - 0.5 1 V V IEBO IC = 10mA, IB = 0, Note 2 VCE = 150V, IB = 0 VCE = 150V, IE = 0 VCE = 150V, IC = 0 150 - - - - - - - - 0.1 10 10 V mA A A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. fT = |hfe| ftest
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab

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